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BLF369
VHF power LDMOS transistor
Rev. 01 -- 13 April 2006 Objective data sheet
1. Product profile
1.1 General description
A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band.
Table 1: Typical performance Typical RF performance at VDS = 32 V and Th = 25 C in a common-source 225 MHz test circuit.[1] Mode of operation CW, class AB 2-tone, class AB
[1]
f (MHz) 225 f1 = 225; f2 = 225.1
PL (W) 500 -
PL(PEP) (W) 500
Gp (dB) 18 19
D (%) 60 47
IMD3 (dBc) -28
Th is the heatsink temperature.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 x 1.0 A: N Load power PL = 500 W N Gain Gp 18 dB N Drain efficiency D = 60 % I Advanced flange material for optimum thermal behavior and reliability I Excellent ruggedness I High power gain I Designed for broadband operation (HF/VHF band) I Source on underside eliminates DC isolators, reducing common-mode inductance I Easy power control
1.3 Applications
I Communication transmitter applications in the UHF band I Industrial applications in the UHF band
Philips Semiconductors
BLF369
VHF power LDMOS transistor
2. Pinning information
Table 2. Pin 1 2 3 4 5 Pinning Description gate1 gate2 drain1 drain2 source
[1]
Simplified outline
1 2
Symbol
1
5
3 5 4
3
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3: Ordering information Package Name BLF369 Description Version flanged LDMOST ceramic package; 2 mounting holes; 4 SOT800-2 leads Type number
4. Limiting values
Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Tstg Tj Parameter drain-source voltage gate-source voltage storage temperature junction temperature Conditions Min -65 Max 65 13 +150 200 Unit V V C C
5. Thermal characteristics
Table 5: Symbol Rth(j-c) Rth(j-h)
[1] [2] [3]
Thermal characteristics Parameter thermal resistance from junction to case Conditions Tj = 200 C
[1][2] [1][2][3]
Typ 0.26 0.35
Unit K/W K/W
thermal resistance from junction to heatsink Tj = 200 C
Tj is the junction temperature. Rth(j-c) and Rth(j-h) are measured under RF conditions Rth(j-h) is dependent on the applied thermal compound and clamping/mounting of the device.
BLF369_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 -- 13 April 2006
2 of 14
Philips Semiconductors
BLF369
VHF power LDMOS transistor
6. Characteristics
Table 6: Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS VGSth IDSS IDSX IGSS gfs RDSon Ciss Coss Crss
[1] [2]
Parameter drain-source breakdown voltage gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance reverse transfer capacitance
Conditions[1] VGS = 0 V; ID = 6 mA VDS = 20 V; ID = 600 mA VGS = 0 V; VDS = 32 V VGS = VGSth + 9 V; VDS = 10 V VGS = 20 V; VDS = 0 V VGS = 20 V; ID = 13 A VGS = VGSth + 9 V; ID = 13 A VGS = 0 V; VDS = 32 V; f = 1 MHz VGS = 0 V; VDS = 32 V; f = 1 MHz VGS = 0 V; VDS = 32 V; f = 1 MHz
[2] [2]
Min 65 4 -
Typ 100 15 40 400 230 15
Max 5.5 4.2 60 -
Unit V V A A nA S m pF pF pF
ID is the drain current. Ciss and Coss include reverse transfer capacitance (Crss).
600 Coss (pF) 400
001aae484
200
0 0 10 20 30 40 50 VDS (V)
VGS = 0 V; f = 1 MHz.
Fig 1. Output capacitance Coss as a function of drain-source voltage VDS; typical values per section
7. Application information
Table 7: RF performance in a common-source 225 MHz test circuit Th = 25 C unless otherwise specified. Mode of operation 2-tone, class AB
BLF369_1
f (MHz) f1 = 225; f2 = 225.1
VDS (V) 32
IDq (A) 2 x 1.0
PL(PEP) (W) 300
Gp (dB) > 18
D (%) > 43
IMD3 (dBc) < -24
Gp (dB) 1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 -- 13 April 2006
3 of 14
Philips Semiconductors
BLF369
VHF power LDMOS transistor
22 GP (dB) 20 D
001aae501
70 D (%) 50
GP
18
30
16 0 100 200 300
10 400 500 PL (W)
VDS = 32 V; f = 225 MHz; IDq = 2 x 1.0 A; Th = 25 C.
Fig 2. CW power gain Gp and drain efficiency D as a function of output power PL; typical values
22 GP (dB) 20 D GP
001aae502
60 D (%) 40
0 IMD3 (dBc) -20
001aae503
18
20
-40
16 0 200 400 PL(PEP) (W)
0 600
-60 0 200 400 PL(PEP) (W) 600
VDS = 32 V; f1 = 225 MHz; f2 = 225.1 MHz; IDq = 2 x 1.0 A; Th = 25 C.
VDS = 32 V; f1 = 225 MHz; f2 = 225.1 MHz; IDq = 2 x 1.0 A; Th = 25 C.
Fig 3. 2-tone power gain Gp and drain efficiency D as a function of peak envelope power PL(PEP); typical values
Fig 4. 2-tone third order intermodulation distortion IMD3 as a function of peak envelope power PL(PEP); typical values
7.1 Ruggedness in class-AB operation
The BLF369 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; f = 225 MHz at rated load power (PL(PEP) = 500 W).
BLF369_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 -- 13 April 2006
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Philips Semiconductors
BLF369
VHF power LDMOS transistor
7.2 Reliability
106 Years 105
(1) (2) (3) (4) (5) (6)
001aae504
104
103
102
10
(7)
(8)
(9)
(10)
(11)
1 0 6 12 18 24 Idc (A) 30
TTF; 0.1 % failure fraction; best estimate values. (1) Tj = 100 C (2) Tj = 110 C (3) Tj = 120 C (4) Tj = 130 C (5) Tj = 140 C (6) Tj = 150 C (7) Tj = 160 C (8) Tj = 170 C (9) Tj = 180 C (10) Tj = 190 C (11) Tj = 200 C
Fig 5. BLF369 electromigration (ID, total device)
8. Test information
Table 8: List of components For test circuit, see Figure 6, 7 and 8. Component B1 B2 C1 C2, C3 C4, C7 C5, C8 C6, C9 C10, C11, C13, C14 C12, C15
BLF369_1
Description semi rigid coax semi rigid coax multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor ceramic capacitor electrolytic capacitor multilayer ceramic chip capacitor ceramic capacitor
Value 25 ; 120 mm 25 ; 56 mm 91 pF 56 pF 100 pF 15 nF 220 F 220 pF 15 nF
[1] [1] [1] [1]
Remarks EZ90-25-TP EZ90-25-TP
[1]
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 -- 13 April 2006
5 of 14
Philips Semiconductors
BLF369
VHF power LDMOS transistor
Table 8: List of components ...continued For test circuit, see Figure 6, 7 and 8. Component C20 C21 C22, C25 C23, C26 C24, C27 C28, C31 C29, C32 C30, C33 L1, L3 L2, L4 L5, L6 R1, R2, R3, R4 R5, R6, R8, R9 R7, R10 R11, R12 T1, T2 T3, T4
[1] [2]
Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor ceramic capacitor electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor ceramic capacitor stripline air coil stripline resistor resistor potentiometer resistor semi rigid coax semi rigid coax
Value 100 pF 20 pF 100 pF 15 nF 10 F 100 pF 220 pF 15 nF
[2] [1] [1] [1] [1]
Remarks
(W x L) 12 mm x 15 mm 4 windings; D = 8 mm; d = 1 mm (W x L) 14 mm x 15 mm
[2]
0.25 W; 4 0.25 W; 10 10 k 0.25 W; 1 25 ; 68 mm 25 ; 60 mm EZ90-25-TP EZ90-25-TP
American technical ceramics type 100B or capacitor of same quality. PCB: Rogers 5880; r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 m.
BLF369_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 -- 13 April 2006
6 of 14
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Objective data sheet Rev. 01 -- 13 April 2006
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. BLF369_1
Philips Semiconductors
+ VG1(test)
C24
+ VD1(test)
R7
C6 C5 C4
C23 C22
C30 L5
R5
R6
L2 L1
C12
R11
C29
C10
C11
R1
R2
C28
T3
T1
C2 B1
50
B2 C31 T4 C21 C20 C1 T2 C3
50
R12 C33
C32
L6
L3
C13
C14
R3
R4 C15
R8
R9
L4
C25 C26
C7 C8
VHF power LDMOS transistor
C9 R10 C27
+ VG2(test)
+ VD2(test)
001aae535
BLF369
7 of 14
Fig 6. Class-AB common-source 225 MHz test circuit; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages
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Objective data sheet Rev. 01 -- 13 April 2006
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. BLF369_1
Philips Semiconductors
80 mm
95 mm
95 mm
001aae536
VHF power LDMOS transistor
BLF369
8 of 14
Fig 7. Printed-circuit board for class-AB 225 MHz test circuit
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Objective data sheet Rev. 01 -- 13 April 2006
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. BLF369_1
C24 + R7 C23 C22 + C4 C5 C6
Philips Semiconductors
+ VG1(test)
R5 C30 T3 R11 C28 C29 C21 C20 BLF 369 C31 C32 L3 R12 C14 B2 C33 T4 L6 R8 R9 T2 R3 L4 C13 R4 C15 C3 C1 L1 L5 T1 R6 L2
+ VD1(test)
R1 R2 C10
C12 B1
C11
C2
+ VD2(test)
+ VG2(test)
+ C26 C27 R10 + C7 C8 C9 C25
001aae537
VHF power LDMOS transistor
BLF369
C1 mounted on top of transformers T1 and T2; C20 mounted on top of transformers T3 and T4
9 of 14
Fig 8. Component layout for class-AB 225 MHz test circuit
Philips Semiconductors
BLF369
VHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT800-2
D
A F y D1
U1 q
B C c w1 M A
M
1
2
B
M
H U2
P E1
E
5
L A
3
4
b e w2 M C
M
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 6.3 5.9 b 10.55 10.45 c 0.15 0.10 D 30.5 29.9 D1 31.1 30.9 E 14.6 14.4 E1 15.3 15.1 e 12.7 0.5 F 2.26 2.00 H 22.8 21.8 L 3.7 3.3 p 3.56 3.49 Q 3.1 2.8 q 38.5 U1 44.5 44.2 U2 15.4 15.0 w1 0.25 0.01 w2 0.25 0.01 y 0.05 0.002
0.248 0.415 0.006 1.201 1.224 0.575 0.602 0.232 0.411 0.004 1.177 1.216 0.567 0.594
0.089 0.898 0.146 0.140 0.122 1.752 0.606 1.516 0.079 0.858 0.130 0.137 0.110 1.740 0.591 EUROPEAN PROJECTION
OUTLINE VERSION SOT800-2
REFERENCES IEC JEDEC JEITA
ISSUE DATE 05-06-02 05-06-07
Fig 9. Package outline SOT800-2
BLF369_1 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 -- 13 April 2006
10 of 14
Philips Semiconductors
BLF369
VHF power LDMOS transistor
10. Abbreviations
Table 9: Acronym CW GSM LDMOS PCB PEP RF TTF VSWR Abbreviations Description Continuous Wave Global System for Mobile communications Laterally Diffused Metal Oxide Semiconductor Printed-Circuit Board Peak Envelope Power Radio Frequency Time To Failure Voltage Standing Wave Ratio
BLF369_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 -- 13 April 2006
11 of 14
Philips Semiconductors
BLF369
VHF power LDMOS transistor
11. Revision history
Table 10. BLF369_1 Revision history Release date 20060413 Data sheet status Objective data sheet Change notice Supersedes Document ID
BLF369_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 -- 13 April 2006
12 of 14
Philips Semiconductors
BLF369
VHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is for the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
BLF369_1
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 -- 13 April 2006
13 of 14
Philips Semiconductors
BLF369
VHF power LDMOS transistor
14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) Koninklijke Philips Electronics N.V. 2006.
All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. Date of release: 13 April 2006 Document identifier: BLF369_1

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